| 摘要 |
PROBLEM TO BE SOLVED: To prevent opening of an organic film having a low permittivity from turning into bow shop by etching the organic film, in such a way that the resulting product when an inorganic hard mask is sputtered is deposited on the sidewall of the opening as a sidewall protective film. SOLUTION: After an aluminum wiring 101, a polyaryl ether film 102, a silicon oxide film 103 which is formed as an inorganic hard mask, and a photoresist film 104 are successively formed on an insulating film formed on a semiconductor substrate, a hole A is formed by opening a prescribed region of the photoresist film 104, and the silicon oxide film 103 is etched under a prescribed condition. Then the polyaryl ether film 102 is etched by using the etched silicon oxide film 103 as a mask, while the photoresist film 104 is left on the film 103. Consequently, the resulted product 105 when the film silicon oxide 103 is sputtered is deposited on the sidewall of the polyaryl ether film 102 in the hole A. The deposit controls the lateral reaction of the oxygen radicals in plasma and suppresses advance of etching in the lateral direction. Therefore, good anisotropic working can be realized.
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