发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To secure satisfactory conduction states among a plurality of wiring layers, in a semiconductor device having multilayer wiring structure by embedded wirings. SOLUTION: A lower wiring 12 is formed with a conductive material. An upper wiring 38 is formed with the conductive material. Insulating layers 14, 16 and 18 are installed between the lower wiring 12 and the upper wiring 38. The lower wiring 12 and the upper wiring 38 are made to be conduction in states through the insulating layers 14, 16 and 18, and a connection part 36 having a cross sectional area larger than that of the lower wiring 12 side is installed on the upper wiring 38 side.
申请公布号 JP2000091428(A) 申请公布日期 2000.03.31
申请号 JP19980258331 申请日期 1998.09.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 KUSUMI YOSHIHIRO;IIDA SATOSHI;YOSHIKAWA KAZUNORI
分类号 H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 主分类号 H01L21/768
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