| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suited to high-temperature operation in which the efficiency of carrier injection is improved and its manufacturing method. SOLUTION: A semiconductor laser 100 is provided with an optical waveguide 120. The optical waveguide 120 is formed by piling up in order a lower clad layer 130 made of n-InP, a core layer 140 and an upper clad layer 150 made of p-InP. The core layer 140 is formed by piling up in order a lower SCH layer 141 made of InGaAsP, a Hall stop layer, an active layer 145 made of AlInGaAs, an electron stop layer 147, and an upper SCH layer 149 made of InGaAs from the side of the lower clad layer 130. In this semiconductor laser 100, the optical loss in the core layer 140 can be reduced by forming the SHC layer (optical confinement layer) of InGaAsP which absorbs less light than AlInGaAs. Further, the efficiency of carrier injection to the active layer 145 can be improved by providing both Hall stop layer 143 and electron stop layer 147. |
