METHOD FOR REGROWING SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method by which a surface oxide film formed on a semiconductor layer made of InGaAs or InGaAsP is effectively removed to form a clean flat surface and at the same time to form a semiconductor layer for relieving lattice distortion to relieve accumulated distortion at a growing interface and then a III-V group compound semiconductor layer having less defects and good crystallinity is regrown. SOLUTION: A surface oxide film on a semiconductor layer is removed to form a semiconductor layer such as InGaAsP or the like for relieving lattice distortion on the uppermost surface of the semiconductor layer by heating it in a mixed atmosphere including tris (dimethylaminoarsine)(TDAASs) and phosphorus (P), or in an atmosphere including phosphorus (P), or in an atmosphere including TDAASa and then in an atmosphere including phosphorus (P), and then on the semiconductor layer is grown again a III-V group compound semiconductor layer whose lattice is aligned with the that of semiconductor layer.