MANUFACTURE OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To obtain a light emitting element using a gallium nitride compound semiconductor having controlled conductivity and electron density. SOLUTION: An AlN buffer layer 2 having a film thickness of 500Å, a higher carrier-density N+-type silicon-doped GaN layer 3 having a film thickness of bout 2.2μm and an electron density of 1.5×1018/cm3, a lower carrier-density N-type GaN layer 4 having a film thickness of about 1.5μm and an electron density of <=1×1015/cm3, and an I-type GaN layer 5 having a film thickness of about 0.2μm are successively formed on a sapphire substrate 1. In addition, aluminum electrodes 7 and 8 are respectively formed on the I-type layer 5 and N+-type layer 3 and connected to the layers 5 and 3.