POSITIVE HOLE INJECTION PERFORMANCE IMPROVING ELECTRODE

摘要

PROBLEM TO BE SOLVED: To improve electron efficiency in a low operating voltage by introducing additive oxygen of a controlled quantity into the surface of an indium tin oxide layer while sticking the oxide layer, and sticking an organic layer on the surface. SOLUTION: Gasoeus oxygen is introduced into sputtering gas by a quantity for a controlled time in a part of a sputtering process to control the oxygen content of an indium tin oxide(ITO) anode. For example, an ITO electrode of 600Åcan be stuck by sputtering by using an Ar flow of 150 sccm containing no oxygen gas while sticking initial 540Å, including gaseous oxygen of 0.1 sccm in the next 50Åand including gaseous oxygen of 0.2 sccm in the final 10Å. Added oxygen is contained in the surface of the ITO anode containing the stuck final 60Åbesides oxygen existing in the anode part of residual ITO.