ELECTROOPTICAL DEVICE, DRIVING SUBSTRATE FOR THE DEVICE AND THEIR PRODUCTION

摘要

PROBLEM TO BE SOLVED: To produce an electrooptical device such as a thin film semiconductor device for display built-in a high performance driver by forming a layer of a material which is good in lattice matching with single crystal silicon on a substrate and carrying out hetero-epitaxial growth using the layer as a seed. SOLUTION: A layer of a material which is good in lattice matching with single crystal silicon, is formed on a substrate so that hetero-spitaxial growth is carried out by using the layer as a seed. For example, a thin crystalline sapphire film 50 is formed on the substrate 1 provided with steps 4 having a prescribed shape and dimension and hetero-epitaxial growth at a low temperature is carried out using the film 50 as a seed. Since a thin single crystal silicon film 7 having a high electron transfer degree of >=540 cm2/v.sec is obtained, a reflection type liquid crystal display device built-in a high performance driver can be produced. Since the steps 4 promote the exitaxial growth, the thin single crystal silicon film 7 having higher crystallinity is obtained.