| 摘要 |
PROBLEM TO BE SOLVED: To prevent film reduction due to erosion, when an unwanted electrode film is removed using chemical mechanical polishing(CMP) method. SOLUTION: In this method, a removal pattern 102b is formed in a region B outside a region A formed by congesting a first trench 101a, a second trench 103a, an isolated trench 103b and a contact hole pattern 102a in an etching stopper film 102 and a second interlayer insulating film 103 is formed in the region A, so as to heap it up in considering the film reduction by the chemical mechanical polishing(CMP) method.
|
