| 摘要 |
PROBLEM TO BE SOLVED: To obtain a wafer in which fluctuations in transistor characteristics are reduced by preventing the diffusion into silicon of Cu produced by a heat treatment such as a Cu interconnection forming process and a manufacturing method therefor, as well as to obtain a semiconductor device formed of the same wafer. SOLUTION: A protective insulating film (protective film made of a material having a small Cu diffusion coefficient) for preventing the diffusion of Cu into the inside of a wafer 100 is formed around the peripheral portion of the main surface of the wafer 100 and on its outer peripheral surface and back surface. The protective insulating film consists of a silicon nitride film 103 and a silicon oxide film. This protective insulating film prevents the diffusion of Cu or the like, which is an interconnection material, into a chip forming region of the wafer 100, thereby suppressing fluctuations in transistor characteristics caused by Cu diffusion. The protective insulating film containing the silicon nitride is formed on the back surface of the wafer 100, its outer peripheral surface continuously joined to the back surface, and the peripheral region of its main surface which is continuously joined to the outer peripheral surface and where at least no integrated circuit is formed.
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