| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily polish TiN after a thermal treatment and enable easy polishing of Cu or Al, by adding HNO3 to abrasives which uses MnO2 as abrasive grains. SOLUTION: An electrode contact hole is formed on an insulating film (e.g. an interlayer insulating film 3 composed of SiO2), and a metal material layer (e.g. a conducting plug material layer composed of W) is formed on the whole surface. The metal material layer is polished with abrasives containing abrasive grains composed of MnO2 and additive forming NO3, and a conducting plug (e.g. a conducting plug 5P) is formed. The additive forming NO3 is HNO3. As a result, performance of MnO2 abrasives is improved, and polishing speed of W, Cu and Al is improved. TiN also can be easily polished irrespective of thermal history.</p> |
