| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent dielectric breakdown, to obtain high breakdown voltage, and to improve reliability. SOLUTION: This semiconductor device is equipped with a radiation plate 5, an AlN(aluminum nitride) substrate 2 fitted onto the radiation plate 5, copper foil 1 which is formed selectively on the AlN substrate so that the circumferential part of the AlN substrate is exposed, a semiconductor element 3 arranged on the copper foil, a container main body (6, 8, 10) provided on the radiation plate while surrounding the AlN substrate, lead wires (7) for external terminals which are held penetrating the container main body and connected electrically to the semiconductor element, and silicone gel 9 charged in the container main body. In this case, solidified resin 11, 11 provided on the outer peripheral part of the copper foil and the peripheral part of the AlN substrate, and then while the outer peripheral part of the copper foil and the peripheral part of the AlN substrate are brought into contact with each other, since resin is present on the boundary surface of both, electric field on the boundary surface between the both is reduced, and creeping discharge is hardly caused.</p> |
