| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase the light emitting efficiency of a gallium nitride-based compound semiconductor element by putting a light emitting layer between a p-type layer and an n-type layer and setting the ratio of the hole density in the p-type layer to the electron density in the n-type layer within a specified range. SOLUTION: On a substrate 11, a buffer layer 12 is formed. Thereon, an n-type contact layer 13 is formed. Then, a stress relaxing layer 14A is formed on the n-type contact layer 13. On the stress relaxing layer 14A, an n-type clad layer 14B is formed. Then, a light emitting layer 15 of the multiple quantum well structure made by alternately depositing a barrier layer 151 and a well layer 152 is formed on the n-type clad layer 14B. Thereafter, a p-type clad layer 16 is formed on the light emitting layer 15 and then a p-type contact layer 17 is formed on the p-type clad layer 16. In this case, the ratio of the hole density in the p-type clad layer 16 to the electron density in the n-type clad layer 14B is set between 0.5 and 2.0.</p> |
