| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a semiconductor layer without crack and dislocation by etching in the shape of an island with a dot-shape, a stripe-shape or a grid-shape and laterally growing a second gallium nitride based compound semiconductor on an exposed surface of a substrate using an island-shaped first gallium nitride based compound semiconductor as core. SOLUTION: An SiO2 layer is etched in a specified form by photolithography. Next an Al0.15Ga0.85N layer 2 is dry-etched using the SiO2 layer with the specified shape as mask. A GaN layer 3 is epitaxially grown on a substrate 1 by MOVPE method. At that time, the GaN layer 3 is epitaxially grown on an Al0.15Ga0.85N layer 2 using the Al0.15Ga0.85N layer 2 as core. But the GaN layer dose not epitaxially grow on an exposed region A of a silicon substrate 1. The GaN is epitaxially grown on the exposed region A of the silicon substrate 1 in the direction of the surface of the silicon substrate 1 using the GaN grown on the Al0.15Ga0.85N layer 2 as core.</p> |
