| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a heating facility and, in addition, the expenses incurred in connection with the heating facility and gas supply, by providing a gas supply means which is provided to at least the wall of a reactor and has a plurality of passages provided in the body of the reactor, and heating the passages by means of a heating means also provided in the body of the reactor. SOLUTION: A reactor for treating a wafer at a high temperature is provided with a heating device which heats wafers, and a gas supply means which supplies a process gas for the wafers. The gas supply means is provided to at least the wall of a reactor and has a plurality of passages 8 and 9 provided in the body of the reactor. In addition, the passages are heated by means of a heating means 16 provided in the body of the reactor. The heating device is provided with the heating means 16. Such a floating wafer reactor is provided that a treating division is limited between the two facing walls of the reactor and each wall has gas discharging openings 6.
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