| 摘要 |
PROBLEM TO BE SOLVED: To prevent an n-type impurity area and n-type reverse damage area from being overlapped even at the time of forming a separated groove for deciding the n-type impurity area as a pixel on a semiconductor substrate containing Hg whose conductivity type is inverted from p-type to n-type, when given any physical damage by applying a dry etching method in this method for manufacturing a semiconductor device. SOLUTION: At the time of carrying out dry etching working to a p-type HgCdTe substrate 21 whose conductive type is inverted from p-type to n-type according to any physical damage, free Hg generated by the dry etching is not fetched into a semiconductor substrate containing Hg again but radiated to the outside part, so that conductive reverse damage spreading amounts 26A can be reduced. Thus, a dry etching process for selecting the kind of etching gas and for controlling the mixing ratio of each etching gas is included in this dry etching working.
|
