| 摘要 |
PROBLEM TO BE SOLVED: To enhance heat resistance of a silicide film formed on a gate and provide the silicide film with high reliability. SOLUTION: A polysilicon 103 is grown on a semiconductor substrate and ion-implanted to be patterned, so as to form a gate electrode by etching away the gate polysilicon 103 using the films 104, 105 after successively depositing an oxide film 104 and a nitride film 105. After the formation of sidewall 106, a diffused layer 107 is formed and then the first titanium silicide film 108 is formed. Next, an interlayer film 109a is formed and flattened to be removed after exposing the nitride film 105. The second titanium silicide film thicker than the first titanium silicide film 108 is formed. The interlayer film is repeatedly formed to be flattened. In such a constitution, the heat resistance of the silicide film formed on the gate electrode can be enhanced, thereby making feasible of providing the semiconductor device with high reliability.
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