| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to reduce a space of and a load on a carrying apparatus, and improve the throughput in a heating step, in which a substrate is treated by heat in two steps at different temperatures. SOLUTION: An upper heating panel 71 for treating a wafer (W) by heat at 90 deg.C, a lower heating panel 72 for treating the wafer (W) by heat at 270 deg.C an elevator pin 80 capable of moving up and down the wafer (W) in a supported state, are provided in a main body 70. The wafer (W) is put near to the upper heating panel 71 by moving up the elevator pin 80 and treated once by heat at 90 deg.C. After that the elevator pin 80 is moved down, and the wafer (W) supported by a proximity pin 81 of the lower heating panel 72 is treated by heat at 270 deg.C.</p> |
