发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To eliminate an influence of an output potential from a voltage drop transistor to an unevenness of a manufacturing process by facilitating setting of a size of voltage drop transistor group of a high voltage sensor in an IC constituted to commonly use two input circuits having different two sensing levels at one input terminal. SOLUTION: The semiconductor integrated circuit comprises a first circuit 2 for sensing a voltage of a first level given to a first input terminal 1, a second circuit 3 connected to the first input terminal to sense a voltage of a second level higher than the fist level, a third circuit 13" for sensing a voltage of a first level to be given to the second input terminal 12, and an internal circuit 121 controlled according to an output from the second circuit at the time of given the voltage of the second level to the first input terminal to operate according to the signal given to the second input terminal.
申请公布号 JP2000088931(A) 申请公布日期 2000.03.31
申请号 JP19990292797 申请日期 1999.10.14
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP 发明人 IWAHASHI HIROSHI
分类号 G01R31/28;G01R31/3185;(IPC1-7):G01R31/318 主分类号 G01R31/28
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