发明名称 |
SURFACE ACOUSTIC WAVE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To obtain a surface acoustic wave device for preventing the electrostatic destruction of an interdigital electrode without damaging any high frequency characteristics or insulating resistance characteristics. SOLUTION: Plural thin film electrodes 7 electrically separated from an interdigital electrode 2 are arranged between the interdigital electrode 2 and the edge face of a substrate 1, and a least one interval between adjacent thin film electrodes 7 is formed narrower than an interval between the thin film electrodes 7 and the interdigital electrode 2. Thus, it is possible to obtain an surface acoustic wave device for preventing the electrostatic destruction of the interdigital electrode without generating the deterioration of the high frequency electric performance or insulating resistance of the device.
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申请公布号 |
JP2000091872(A) |
申请公布日期 |
2000.03.31 |
申请号 |
JP19980258671 |
申请日期 |
1998.09.11 |
申请人 |
HITACHI MEDIA ELECTORONICS CO LTD |
发明人 |
FUJITA YUJI;HOSAKA NORIO;NAKAJIMA MISAO |
分类号 |
H03H9/145;H03H9/02;H03H9/25;(IPC1-7):H03H9/145 |
主分类号 |
H03H9/145 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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