发明名称 RF PLASMA ETCH REACTOR WITH INTERNAL INDUCTIVE COIL ANTENNA AND ELECTRICALLY CONDUCTIVE CHAMBER WALLS
摘要 The present invention provides an inductive antenna secured within a processing chamber. The antenna may be constructed so that it can be attached to an electrically conductive chamber wall and so that it readily transfers heat to the chamber wall. Conductive chamber walls provide an improved anode for the bias circuit and allow for temperature regulation of the antenna. In one possible embodiment, the antenna may comprise a conductor surrounded by an electrically insulative, thermally conductive, non-sputtering material, such as ceramic, which may be attached to the chamber wall. To reduce inductive power attenuation, the exposed surface of the antenna may be separated by gaps which inhibit eddy currents from flowing in conductive deposits on the antenna. Adjacent antenna turns, as well as the turns themselves, may be separate by gaps. The dimensions and shape of the gap inhibit conductive etch byproduct from bridging the gaps. Dummy rings may be located between antenna rings and removed to facilitate cleaning. Process gases may be fed to the chamber via the gaps.
申请公布号 WO0017906(A2) 申请公布日期 2000.03.30
申请号 WO1999US21740 申请日期 1999.09.21
申请人 APPLIED MATERIALS, INC. 发明人 YE, YAN;OLGADO, DONALD;KUMAR, ANANDA, H.;MOK, YEUK-FAI;D'AMBRA, ALLEN;TEPMAN, AVI;MA, DIANA;YIN, GERALD;LOEWENHARDT, PETER;HWANG, JENG;MAK, STEVE
分类号 H05H1/46;B01J19/08;H01J27/16;H01J37/08;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01J37/32 主分类号 H05H1/46
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