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发明名称
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要
A semiconductor device having a cobalt silicide film to which at least nickel or iron is added to prevent the film from having a high resistance due to the small thickness of the film.
申请公布号
WO0017939(A1)
申请公布日期
2000.03.30
申请号
WO1999JP05108
申请日期
1999.09.20
申请人
HITACHI, LTD.;SHIMAZU, HIROMI;IWASAKI, TOMIO;OHTA, HIROYUKI;MIURA, HIDEO;IKEDA, SHUJI
发明人
SHIMAZU, HIROMI;IWASAKI, TOMIO;OHTA, HIROYUKI;MIURA, HIDEO;IKEDA, SHUJI
分类号
H01L21/285;H01L21/336;H01L21/768;(IPC1-7):H01L29/78;H01L27/108
主分类号
H01L21/285
代理机构
代理人
主权项
地址
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