| 摘要 |
<p>The method of the invention induces crystallization in an amorphous semiconductor layer (16), and includes the steps of: a) producing a patterned metal layer (18) on a first substrate (17), the metal layer (18) exhibiting a weak level of adherence to the first substrate; b) pressing the metal layer (18) into physical contact with the amorphous semiconductor layer (16); c) applying heat, light or both to the metal layer (18) and amorphous semiconductor layer (16) to cause a reaction therebetween and a crystallization of the amorphous semiconductor that is juxtaposed to the metal.</p> |
