| 摘要 |
<p>A method for forming a fluorine-added carbon insulating film on an object (10) to be processed by a plasma produced from a film-forming gas containing a carbon-fluorine compound gas in a vacuum enclosure (2) having therein a susceptor (4) on which the object (10) is mounted, and driving ions in the plasma into the object (10) while applying a bias voltage to the susceptor (4). A bias voltage is applied to the susceptor (4) with a first electric power, a carbon-fluorine compound gas is introduced at a first flow rate, and a fluorine-added carbon film is formed on the object (10). Next, a bias voltage is applied to the susceptor (4) with a second electric power smaller than the first electric power, a carbon-fluorine compound gas is introduced at a second flow rate lower than the first flow rate, and a fluorine-added carbon film is formed on the object (10). Even if the fluorine-added carbon film is buried in a recess of a high aspect ratio, few voids are produced, and the throughput is improved.</p> |
