VAPOR DEPOSITION DEVICE AND METHOD USING PLASMA- REINFORCED CHEMICAL VAPOR DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a method and device for eliminating the conventional drawback of a chemical vapor deposition that a vaporized metal film is deposited on an insulating member in a processing chamber to degrade insulation to reduce instability of the plasma. SOLUTION: In a device for performing a chemical vapor deposition on a substrate 18 placed in a processing chamber by supplying a processing gas to the substrate 18 from a shower head electrode 20 and by generating a plasma trenches 74 having a large aspect ratio are made on the insulating surface 72 of the outside surface of an insulating member 70 supporting the shower head electrode 20. The insulating surface 72 of the insulating member 70 which is apt to have deposits, as is the substrate 18, does not have the deposits in the trenches 74 because the trench has a large aspect ratio and hence does not reduce the insulation of the insulating member 70 and can prevent the plasma from becoming unstable.