| 摘要 |
PROBLEM TO BE SOLVED: To provide a dynamic RAM capacitor for reducing the cell area and reducing the number of manufacturing processes by forming a storage node through self alignment. SOLUTION: In the capacitor of a dynamic RAM formed on a semiconductor substrate 1, the storage node 5 is formed in a self-aligning manner on the sidewall of a contact hole 4 connected to an impurity diffused region 2 on the semiconductor substrate 1 and at the bottom of the contact hole 4 or only on the sidewall of the contact hole 4. Then, an inter-layer insulation film 3 on the outer side of the storage node 5 is removed. |
