| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having resistance elements with stable resistance values, a semiconductor storage and a manufacturing method of the semiconductor device. SOLUTION: On a semiconductor substrate 1, this semiconductor device has a resistance portion 13, made of polysilicon where impurities are diffused, a first insulating film (SIN film) 14 formed on the resistance portion 13, a second insulating film (SIN film) 15 formed on the first insulating film 14 and an impurity-containing layer (BPSG film) 16 formed on the second insulating film 15. |
