METHOD OF MAKING FLEXIBLY PARTITIONED METAL LINE SEGMENTS FOR A SIMULTANEOUS OPERATION FLASH MEMORY DEVICE WITH A FLEXIBLE BANK PARTITION ARCHITECTURE

摘要

A method of forming flexibly partitioned metal line segments (10 and 12) for separate memory banks in a simultaneous operation flash memory device with a flexible bank partition architecture comprises the steps of providing a basic metal layer (2) comprising a plurality of basic metal layer segments (2a, 2b, 2c, ...2j) separated by a plurality of gaps (6a, 6b, 6c, ...6i), each of the gaps having a predefined gap interval length, and providing a metal option layer (8) comprising a plurality of metal option layer segments on the basic metal layer (2), the metal option layer segments overlapping the gaps between the basic metal layer segments but leaving one of the gaps open, to form the metal line segments for the separate memory banks.