发明名称 |
Integrated circuit contact point leakage current test method |
摘要 |
Leakage current test method involves receiving at the point of contact (1) of an integrated circuit (IC) receives a test voltage at a given potential (T) via an output of a test voltage applicator (3,6), the output (6) being high-resistance in circuit or isolated form the point of contact (1). The potential (P) of the point of contact (1) is determined as a measure of the occurring leakage current. More specifically, the potential (P) is ascertained after a given length of time (t1), and it is verified whether the ascertained potential exceeds or fails to attain a threshold value.
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申请公布号 |
DE19836361(C1) |
申请公布日期 |
2000.03.30 |
申请号 |
DE19981036361 |
申请日期 |
1998.08.11 |
申请人 |
SIEMENS AG |
发明人 |
SCHAFFROTH, THILO;SCHNEIDER, HELMUT;SCHAMBERGER, FLORIAN |
分类号 |
G01R31/02;G01R31/04;G01R31/30;G01R31/317;(IPC1-7):G01R31/30;H01L21/66 |
主分类号 |
G01R31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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