发明名称 Integrated circuit contact point leakage current test method
摘要 Leakage current test method involves receiving at the point of contact (1) of an integrated circuit (IC) receives a test voltage at a given potential (T) via an output of a test voltage applicator (3,6), the output (6) being high-resistance in circuit or isolated form the point of contact (1). The potential (P) of the point of contact (1) is determined as a measure of the occurring leakage current. More specifically, the potential (P) is ascertained after a given length of time (t1), and it is verified whether the ascertained potential exceeds or fails to attain a threshold value.
申请公布号 DE19836361(C1) 申请公布日期 2000.03.30
申请号 DE19981036361 申请日期 1998.08.11
申请人 SIEMENS AG 发明人 SCHAFFROTH, THILO;SCHNEIDER, HELMUT;SCHAMBERGER, FLORIAN
分类号 G01R31/02;G01R31/04;G01R31/30;G01R31/317;(IPC1-7):G01R31/30;H01L21/66 主分类号 G01R31/02
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