发明名称 THIN-FILM STRUCTURE OF A MAGNETIC FIELD SENSOR WITH A MAGNETORESISTIVE MULTILAYER SYSTEM HAVING ELECTRON SCATTERING SPIN DEPENDENCY
摘要 A thin-film structure of a magnetic field sensor includes a multilayer system having enhanced magnetoresistive effect and exhibiting spin dependency of electron scattering at an interface as well as diffuse scattering of unreflected electrons. The interface which reflects spin-dependently is intended to lie between respective neighboring layers of magnetic and nonmagnetic material. The materials have lattice dimensions matched to one another and are immiscible. The layers of magnetic material are preferably divided into spin-selectively reflecting and scattering regions.
申请公布号 CA2284160(A1) 申请公布日期 2000.03.30
申请号 CA19992284160 申请日期 1999.09.28
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 VAN DEN BERG, HUGO;PERSAT, NATHALIE
分类号 H01F10/26;G01R33/09;H01F10/08;H01F10/32;H01L43/08;(IPC1-7):G01R33/09;G01R33/44 主分类号 H01F10/26
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