| 摘要 |
<p>A semiconductor device includes a capacitor and an interconnect layer disposed on a semiconductor substrate. The capacitor is formed of a bottom electrode, a capacitor dielectric film and a top electrode. The interconnect layer is formed of a first interconnect layer and a second interconnect layer laminated on the first interconnect layer. The bottom electrode and the first interconnect layer are formed of a first metal layer. The top electrode and the second interconnect layer are formed of a second metal layer. The capacitor dielectric film is formed only on the bottom electrode. <IMAGE></p> |
