| 摘要 |
A thin semiconductor film device according to the present invention includes an insulative substrate, a metal layer formed on the insulative substrate, and a metal oxide layer formed on the metal layer. The metal oxide layer is obtained from anodization of the metal layer. In a preferred embodiment, an insulation film of silicon oxide or silicon nitride is formed on the metal oxide layer, and a semiconductor layer obtained by crystallizing the amorphous silicon layer is formed on the insulation film.
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