| 发明名称 |
Method of prevention of degradation of low dielectric constant gap-fill material |
| 摘要 |
Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as-deposited HSQ layer in a silane (SiH4) containing plasma.
|
| 申请公布号 |
US6043147(A) |
申请公布日期 |
2000.03.28 |
| 申请号 |
US19970993119 |
申请日期 |
1997.12.18 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHEN, ROBERT C.;SHIELDS, JEFFREY A.;DAWSON, ROBERT;TRAN, KHANH |
| 分类号 |
C23C16/40;C23C16/56;H01L21/3105;H01L21/312;H01L21/768;(IPC1-7):H01L21/316 |
主分类号 |
C23C16/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
