发明名称 Plasma processing apparatus protected from discharges in association with secondary potentials
摘要 A plasma processing apparatus such as a plasma etching apparatus, which is not subject to arcing to the gas distributor plate which is caused by secondary potentials generated by polymers adhering to a gas distribution plate. The gas distribution plate is electrically isolated from the ground electric potential, and does not have any polarity. The gas distribution plate may be formed of an insulating material. Furthermore, a support plate may be adapted to fix the gas distribution plate to a chamber of the apparatus in such a manner that the gas distribution plate is detachably coupled with the support plate. Thereby, it is easier to separate the gas distribution plate from the apparatus to remove the accumulated polymers during the plasma process.
申请公布号 US6041733(A) 申请公布日期 2000.03.28
申请号 US19970957054 申请日期 1997.10.24
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 KIM, CHANG-SIK;PARK, JIN-HO;MOON, KYEONG-SEOB;SEO, YOUNG-HO;LIM, TAE-HYUNG;CHOI, BYUNG-MOOK;KIM, JU-HO
分类号 H05H1/46;C23C16/50;C23F4/00;H01J37/32;H01L21/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00;C23C14/00;C23F1/02 主分类号 H05H1/46
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