| 摘要 |
PROBLEM TO BE SOLVED: To suppress decomposition of an org. metal compd. which easily decomposes and to enable stable vapor transfer by using a compd. having same groups as free radicals as a carrier gas or by incorporating the compd. into the carrier gas for vapor transport. SOLUTION: An org. metal compd. having free radicals, for example, an org. metal compd. expressed by MnR1...Rm is vaporized by using a carrier gas and transported with the carrier gas to the reaction region to perform chemical vapor phase growing to form a metal-based film. In the formula, M is a metal element, R1 to Rm are each O, N, S, P, F, Cl, Br, I, H, org. groups or silicon- based compds., n is an integer 1 to 4, and m is an integer 1 to 8. As for the carrier gas, a compd. having the same groups as the free radicals, for example, a compd. expressed by Rk or Rk.H (wherein Rk is one of R1 to Rm) is used. Thereby, the free radicals are allowed to present in an excess amt. in the atmosphere containing the org. metal compd. so as to suppress its decomposition and to stabilize the compd.
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