| 摘要 |
PROBLEM TO BE SOLVED: To uniformize the thickness of a film without the influence of the number of times of arc suppressing operation by applying reverse voltage to a reactive sputtering reaction vessel to be applied with DC voltage to suppress an arc and automatically correcting the objective set time or driving time in accordance with the applying frequency thereof. SOLUTION: Voltage is applied from a DC power source 1 for discharge to a reaction vessel 2, and reactive sputtering is executed. Moreover, by a control device 5, the fact that the driving time passed from the start of discharge reaches the objective set time is detected, the completion of the discharge is indicated to the DC power source 1 for discharge, and the sputtering treatment is finished. In this way, on a substrate or a wafer of a work, a metallic compd. thin film is formed to a prescribed film thickness. Moreover, by an arc suppressing device 4, the generation of an arc in the reaction vessel 2 is detected, and reverse voltage is applied to suppress an arc. At this time, the number of times of the reverse voltage to be applied is detected by a counting part 6, in accordance with the frequency, the objective set time or driving time is automatically corrected by an objective set time correcting part 7, the comparison between both is executed, and the control of the sputtering treatment is executed.
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