发明名称 Apparatus for exciting a plasma in a semiconductor wafer processing system using a complex RF waveform
摘要 A method and apparatus for generating a complex waveform and coupling the waveform to a reaction chamber of a semiconductor wafer processing system using a power amplifier. Specifically, the apparatus includes a complex waveform generator coupled to a high-power amplifier. The high-power amplifier is coupled to one or more frequency selective matching networks which select bands of RF signal to be coupled to plasma excitation circuit within the semiconductor wafer processing system.
申请公布号 US6043607(A) 申请公布日期 2000.03.28
申请号 US19970991749 申请日期 1997.12.16
申请人 APPLIED MATERIALS, INC. 发明人 RODERICK, CRAIG A.
分类号 H01J37/32;H05H1/46;(IPC1-7):H05H1/46 主分类号 H01J37/32
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