Rapid and selective heating method in integrated circuit package assembly by means of tungsten halogen light source

摘要

A method and apparatus for selectively heating a structure (20) capable of absorbing heat radiations in the 0.5 to 2 micron range relative to an adjacent structure (24) wherein a first structure capable of absorbing heat radiations in the 0.5 to 2 micron range is disposed adjacent a second structure much less capable of absorbing heat radiations in the 0.5 to 2 micron range. An unfocused heat source (28) which provides a major portion of its heat energy in the range of from about 0.5 mu to about 2 mu relative to heat energy above 2 mu and below 0.5 micron directs heat concurrently to the first and second structures to heat the first structure to a temperature sufficiently high and much higher then the second structure to permit a predetermined function to be performed in conjunction with the first structure while maintaining the second structure below a predetermined temperature. The function is then performed. The heat source preferably comprises an unfocused tungsten halogen lamp.