| 摘要 |
An active matrix base presented can be readily manufactured using existing fabrication technologies, and driven by either sequential-stagger TFT or reverse-stagger TFT. The bonded interface of the matrix base has low values of electrical resistance in the terminal sections, and maintains stable resistance even after being exposed to high temperature, high humidity conditions. These results are obtained because the component materials are chosen to prevent surface oxidation at the connecting electrodes. The connecting terminals for contact with the drive circuit is made of a nitride film of a high melting point metal or a high electrical conductivity metal, at least in the interface region with the tape carrier package. The metal which can be used includes chrome, tantalum, niobium, titanium, molybdenum and tungsten, or its alloy made mostly from the element, and the high electrical conductivity metal includes aluminum or an alloy of mostly aluminum.
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