| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high quality PZT film by feeding a sol containing the components of the film to the vicinity of plasma while generating the plasma and forming a thin film consisting essentially of part of the components contained in the sol on a substrate disposed in or near the plasma. SOLUTION: A sol 13 is introduced into a chamber 11, an electrode 14 is disposed in the sol 13, an electrode 15 is disposed at the outside of the sol 13 and a substrate 16 on which a film is formed is made adjacent to the electrode 15. Plasma is generated near the surface of the sol to form the objective thin film on the substrate. The sol is preferably based on a liquid mixture of 2-n-butoxyethanol, lead acetate, acetylacetonatozirconium and titanium tetraisopropoxide. A PZT film having an adequate oxygen content is obtained by filling the chamber with an atmosphere of oxygen. A PZT film having high crystallinity is obtained by controlling the temperature of the substrate. The PZT film may be produced with DC plasma or RF plasma. |
