SINGLE CRYSTAL OF INDIUM ARSENIC ANTIMONY

摘要

PROBLEM TO BE SOLVED: To obtain an InAsSb single crystal useful for an infrared device. SOLUTION: This InAsSb single crystal has >=0.9 composition ratio (x) in InAs1-xSbx and has at least >=9μm basic absorption edge wavelength. The single crystal is made by using a liquid phase method and has its characteristics completely different from those of conventional known single crystal and the basic absorption wavelength is shifted to a longer wavelength side.