| 摘要 |
A Light-emitting diode having improved moisture resistance characteristics comprises a p-type gallium arsenide substrate and four epitaxial layers of AlxGa1-xAs (22, 23, 24 and 25). These epitaxial layers comprises an intervening layer (22) of p-type Alx1Ga1-x1As, a cladding layer (23) of p-type Alx2Ga1-x2As, an active layer (24) of Alx3Ga1-x3As, and a window layer (25) of Alx4Ga1-x4As so as to form a double-hetero structure, where x1, x2, x3 and x4 represent mixed crystal ratios of aluminum to arsenic of the layers, respectively, and meet the condition that:x2>/=x4>x1>/=x3 (0</=x1, x2, x3, x4</=1).
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