发明名称 |
Method of fabricating contact plug |
摘要 |
A method of fabricating a metal plug. On a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer, a conformal titanium layer is formed on the dielectric layer and the via hole. A low temperature annealing is formed in a nitrogen environment, so that a surface of the titanium layer is transformed into a first thin titanium nitride layer. A conformal second titanium nitride layer is formed on the first thin titanium nitride layer by using collimator sputtering. A metal layer is formed and etched back on the second titanium nitride layer to form a metal plug.
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申请公布号 |
US6043148(A) |
申请公布日期 |
2000.03.28 |
申请号 |
US19980061613 |
申请日期 |
1998.04.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
PENG, YUAN-CHING;CHEN, LIH-JUANN;YANG, YU-RU;HSIEH, WIN-YI;HSIEH, YONG-FEN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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