发明名称 Method of calibrating WEE exposure tool
摘要 The invention provides four sub-patterns located at the periphery of the wafer surface at 90-degree intervals. Each of the four sub-patterns is divided into four alignment scales where each alignment scale is yet again subdivided into a multiplicity of alignment marks. This multiplicity of sub-patterns and alignment scales with each scale having a multiplicity of alignment marks results in very accurate and convenient alignment capability.
申请公布号 US6042976(A) 申请公布日期 2000.03.28
申请号 US19990245561 申请日期 1999.02.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHIANG, WEN-CHONG;HSIUE, JUNG-HAU;SHIH, SHIH-CHANG;CHEN, YUNG-DAR
分类号 G03F7/20;G03F9/00;(IPC1-7):G03F9/00 主分类号 G03F7/20
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