| 摘要 |
PROBLEM TO BE SOLVED: To uniformly control the oxygen concentration distribution in the crystal growth direction and the radial direction, prevent dislocating and produce a silicon single crystal of excellent quality. SOLUTION: This method for producing a silicon single crystal comprises performing the control so as to keep the intensity of a cusp magnetic field constant and further keep the central position of the magnetic field present in the intermediate part of an upper and a lower coils 6a and 6b within a prescribed range from the surface height of a melt in a process for pulling up a straight body part forming the product diameter of the single crystal in the method for producing the silicon single crystal according to the Czochralski process for arranging the coils 6a and 6b for producing the magnetic field provided on the upper and lower sides of a crucible and pulling up the crystal while applying the cusp magnetic field of a uniaxial symmetry relatively to a pulling up shaft. In the method for producing the silicon single crystal, the control is preferably performed so as to keep the intensity of the magnetic field at 300-600G which is constant and further keep the central position of the magnetic field within the range of -40 to -100 mm from the surface height of the melt or within the range of -7 to -18% from the surface height of the melt based on the inside diameter of the crucible. Furthermore, the number of revolutions of the crucible is preferably kept constant.
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