| 摘要 |
A transient voltage pump is provided to generate a high voltage pulse for triggering turn-on of an ESD protection device. As VDD-to-VSS voltage increases rapidly in the initial ESD event, the voltages of the high voltage pulses are larger than the trigger voltage of the ESD device while the ESD voltage is still at substantially lower voltage. These high voltage pulses are used to early trigger the NMOS transistor before the ESD transient voltage actually reaches the trigger voltage. The present invention improves the ESD performance of an ESD protection device, such as a MOSFET or bipolar transistor, which is provided for protecting the power bus or IC pins during an ESD event.
|
