PRODUCTION OF OXIDE SINGLE CRYSTAL SUBSTRATE ND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide both a method for production by which an oxide single crystal substrate having a substrate surface flat on the atomic level and good in crystallinity can efficiently and stably be produced at a low cost and an electronic device having an oxide superconductor thin film or an oxide insulator thin film good in crystallinity. SOLUTION: This method for producing an oxide single crystal substrate comprises (a) a polishing step for polishing the surface of the oxide single crystal substrate, (b) a surface removing step for applying ultrasonic vibration to the oxide single crystal substrate in a liquid and removing the surface part in which the stress due to the polishing remains and (c) a heat-treating step for heat-treating the oxide single crystal substrate after removing the surface. An oxide superconductor thin film or an oxide ferroelectric thin film is epitaxially grown on the oxide single crystal substrate after passing through the steps. Thereby, the oxide single crystal superconductor thin film or the oxide insulator thin film good in crystallinity can be formed on the surface of the oxide single crystal substrate. As a result the high-quality electronic device using the oxide single crystal superconductor thin film or the oxide insulator thin film can be obtained.