发明名称 Power segmented electrode
摘要 A power segmented electrode useful as part of an upper electrode and/or substrate support for supporting a substrate such as a semiconductor wafer in a plasma reaction chamber such as a single wafer etcher. The power segmented electrode includes a plurality of electrodes which are supplied radiofrequency power in a manner which provides uniform processing of the substrate. The power to the electrodes can be supplied through a circuit incorporating interelectrode gap capacitance, one or more variable capacitors, one or more current sensors, a power splitter, one or more DC biasing sources, and/or power amplifier.
申请公布号 US6042686(A) 申请公布日期 2000.03.28
申请号 US19950491349 申请日期 1995.06.30
申请人 LAM RESEARCH CORPORATION 发明人 DIBLE, ROBERT D.;LENZ, ERIC H.;LAMBSON, ALBERT M.
分类号 H05H1/46;H01J37/32;H01L21/302;H01L21/3065;H01L21/683;(IPC1-7):C23F1/02 主分类号 H05H1/46
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