FERMI THRESHOLD FIELD EFFECT TRANSISTOR WITH REDUCED GATE AND DIFFUSION CAPACITANCE

摘要

An improved Fermi FET structure with low gate and diffusion capacity allows cond uction carriers to flow within the channel at a predetermined depth in the substrate below the gate, without requiring an i nversion layer to be created at the surface of the semiconductor. The low capacity Fermi FET is preferably implemented using a Fermi Tub having a predetermined depth, and with a conductivity type opposite the substrate conductivity type and the same c onductivity type as the drain and source diffusions.