| 摘要 |
An insulating film has steps on its surface according to the steps on the substrate. The surface of the insulating film is planarized by CMP. The insulating film has thick portions and thin portions. In the thick and thin portions of the insulating film, first and second contact holes are made. The diameter of shallow second contact holes made in the thin portions of the insulating film is set smaller than that of deep first contact holes made in the thick portions of the insulating film. The first and second contact holes are filled with tungsten simultaneously by CVD techniques to form first and second contacts. The surfaces of the first and second contacts coincide with the surface of the insulating film.
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