| 摘要 |
PURPOSE:To improve a photoelectric conversion efficiency by forming a doping layer and an i-type layer of a pin type photovoltaic element formed of nonsingle crystal silicon semiconductor material by a microwave plasma CVD method. CONSTITUTION:A photovoltaic element comprises a substrate 101, a microwave (MW) n-type layer 102 having an n-type conductivity, an i-type layer 104 containing alkaline earth metal element and a MW p-type layer 106 to be formed by an MW PCVD method, a PF n-type layer 103 having an n-type conductivity, a PF p-type layer 105 having a p-type conductivity to be formed by a PFPCVD method, a transparent electrode 107 and a condensing electrode 108. Since the MWPCVD method is used when the MW doping layer and the i-type layer are formed, its depositing speed is fast to improve its throughput, and the element having excellent characteristics can be obtained. |
